IEE SAS has 65-years long tradition in the research of semiconductor materials and devices with extensive expertise in the compound semiconductor epitaxy and device manufacture incl. (U)WBG materials such as GaN and Ga2O3, well documented by the number of successfully coordinated and implemented projects, e.g. SAFEMOST – Highly Safe GaN MOS Transistor Switch (IVF, 2015 – 2019) with the MFA or Modern Ga2O3 electronic devices for future HV applications (APVV, 20-0220, 2021 – 2025).

Łukasiewicz-IMiF has been leading the field of semiconductor research in Poland since 1966. The members of the involved team specialise in the novel conductive and oxide thin films for junctions to GaN, SiC, and Ga2O3 and have taken part in many projects related to the (U)WBG materials, such as FP6, FP, m-era.net and
national projects, e.g. Efficiency enhancement in GaN LDs (OxyGaN) (m-era.net DWM.M-ERA.NET2/133/2020, 2020-2023) with the MFA.

HUN-REN EK-CER is committed to interdisciplinary research on complex functional materials and structures, studies of physical and chemical principles, and development of characterization techniques. Thin Film Physics Department involved in this project has more than half a century experience in the field of thin films analysis using transmission electron microscopy and has led or participated in EU and national projects on oxides and WBG semiconductors.