Power conversion systems used in EVs and e.g. mobile phone and laptop chargers rely on semiconductor devices such as transistors and diodes. Improvement of their efficiency yields more efficient converters. The current mainstream power converters use silicon (Si)-based technology, much less efficient than highly advanced modern electronic switches and rectifiers based on (ultra) wide bandgap, (U)WBG, semiconductors with the conversion efficiency up to ~99% [1, 2]. Gallium oxide (Ga₂O₃) is an excellent candidate for high-power applications, offering ~3000 higher power figure of merit compared to Si, i.e. smaller and cheaper devices with improved efficiency due to lower conduction losses can be made. While still in its early days, recent reports document an immense increase in the research interest and spectacular continuous improvement of produced devices reaching record high operating voltages. Most advances were achieved by the universities and companies in the AsiaPacific region, and universities and government-funded institutions in the U.S. Especially the involvement of U.S.-based defense and energy-related research laboratories underlines the strategic potential of Ga₂O₃-based electronics [3]. EU research is trying to catch up with the trend, however the current effort appears several steps behind the state-of-the-art, partially related to the lack of dedicated Ga₂O₃ growth systems.

As the work on Ga₂O₃ is still in its nascent stage, it is relevant to unify the efforts of individual partners in larger value chains to be able to influence the field and strengthen high-tech competences in Central Europe. Our competence cluster will perform a research collaboration to establish good practices and create knowledge – starting point for further growth in (U)WBG research through future EU and national R&D project applications. We will also design, manufacture, and analyse novel Ga₂O₃-based rectifying diodes. By establishing a dedicated section at a reputable scientific conference, we will promote the growth of Central European network of researchers and industrial stakeholders contributing to the (U)WBG power electronics. We will also initiate an interinstitutional training mobility focused on knowledge transfer in the V4 region.

Our advantage is the previous extensive experience with the growth of Ga₂O₃ layers using IEE SAS’s custom-built system. Our consortium is experienced in p-type and conducting film deposition and is well-equipped for device manufacture in the cleanroom facilities and for advanced electrical characterisation. Our experts in high-resolution electron microscopy can identify the technology weak spots and provide invaluable feedback to the thin film growth and device manufacture to achieve improved performance. Establishing of a new research cluster can help speed up the technology development by coordinating the efforts and limit the potential risks by some degree of redundancy and complementarity of the involved tools and techniques.